非晶硅防熔丝的导通可靠性

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499281

G. Zhang, Y. King, S. Elfoukhy, E. Hamdy, T. Jing, P. Yu, C. Hu

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引用次数: 5

摘要

提出了一种统一的硅铝抗熔断器导通可靠性模型。该物理模型兼顾了热活化和电迁移。导电环节的温度是抗熔断器受力时的温度，由应力电流控制，而不是环境温度。为了确保10年的使用寿命，a- si防熔断器应在小于其编程电流值60%的电流值下运行。

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On-state reliability of amorphous silicon antifuses

A unified model of the on-state reliability of a-Si antifuses is presented. This physical model accounts for both thermal activation and electromigration. Temperature at the conductive link is the temperature at which the antifuse is stressed and is controlled by the stress current, not the ambient. To ensure a 10 year lifetime, a-Si antifuses should be operated at a current value less than 60% of its programming current value.

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Proceedings of International Electron Devices Meeting

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