用x射线衍射和x射线反射率表征不同N2流量下沉积的氮化钽薄膜的性能

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452540

Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo

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引用次数: 1

摘要

在本研究中，实验了在不同N2气体流量下沉积的氮化钽(TaN)薄膜，表征了气体流量对薄膜性能的影响。x射线反射率(XRR)测量执行检查薄膜厚度和密度的差异。利用x射线衍射(XRD)观察了TaN晶体的取向变化，并量化了晶粒尺寸。当N2气体流量从3%增加到42%时，薄膜厚度、密度、晶体取向和晶粒尺寸都有明显的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Property Characterization of Tantalum Nitride Film Deposited with Different N2 Flow by X-Ray Diffraction and X-Ray Reflectivity

In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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