Ryo Yoshida, M. Hara, H. Oguchi, Tatsuya Suzuki, H. Kuwano
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引用次数: 2

摘要

本文介绍了利用微型离子液体离子源阵列(ILIS)进行同步反应离子刻蚀的方法。该系统由微针发射器和1-乙基-3-甲基咪唑四氟硼酸盐([EMIM]-[BF4])离子液体(IL)储存器组成。用自制的ILIS阵列对(100)硅衬底进行了离子束刻蚀。在刻蚀过程中,通过质谱分析,观察到SiF+、SiF2+和SiF3+的峰。硅基离子与氟基离子之间的化学反应得到了证实。此外,根据衬底上的蚀刻凹痕,计算了ILIS阵列在5.1 kV离子加速电压下对硅的蚀刻速率,比传统聚焦Ga+离子束在30 kV离子加速电压下的蚀刻速率高1.5倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Concurrent reactive ion etching employing micromachined ionic liquid ion source array
This paper describes concurrent reactive ion etching using micro ionic liquid ion source (ILIS) array. The system consists of micro needle emitters and a reservoir for the ionic liquid (IL) of 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]-[BF4]). The ion beam etching of a (100) silicon substrate using the fabricated ILIS array was demonstrated. As a result of mass spectroscopy during the etching, the peaks of SiF+, SiF2+, and SiF3+ were observed. The chemical reaction between the silicon and fluorine based ions from the IL was confirmed. Also, etching rate of the silicon using the ILIS array applying 5.1 kV ion-acceleration voltage was calculated from the etched dimple on the substrate and was 1.5 times larger than that of a conventional focused Ga+ ion beam applying 30 kV ion-acceleration voltage.
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