{"title":"随机存取存储器中脉冲加热导电灯丝的非扩散散热","authors":"K. Regner, J. Malen","doi":"10.1109/IRPS.2016.7574544","DOIUrl":null,"url":null,"abstract":"Here, we discuss experimental and theoretical studies of nondiffusive thermal transport, which occurs when geometrical length scales are comparable to energy carrier mean free paths (MFPs). We expand upon a previous study that emphasizes the importance of nondiffusive thermal transport in resistive-switching random access memory (RRAM). To model this behavior, an approximate solution to the Boltzmann transport equation (BTE), under the relaxation time approximation in the cylindrical geometry, is derived for the case of an arbitrary, temporally periodic surface temperature boundary condition. This boundary condition coupled with the BTE more realistically models switching stimuli in an RRAM device.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nondiffusive heat dissipation from a pulse-heated conductive filament in RRAM\",\"authors\":\"K. Regner, J. Malen\",\"doi\":\"10.1109/IRPS.2016.7574544\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, we discuss experimental and theoretical studies of nondiffusive thermal transport, which occurs when geometrical length scales are comparable to energy carrier mean free paths (MFPs). We expand upon a previous study that emphasizes the importance of nondiffusive thermal transport in resistive-switching random access memory (RRAM). To model this behavior, an approximate solution to the Boltzmann transport equation (BTE), under the relaxation time approximation in the cylindrical geometry, is derived for the case of an arbitrary, temporally periodic surface temperature boundary condition. This boundary condition coupled with the BTE more realistically models switching stimuli in an RRAM device.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574544\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nondiffusive heat dissipation from a pulse-heated conductive filament in RRAM
Here, we discuss experimental and theoretical studies of nondiffusive thermal transport, which occurs when geometrical length scales are comparable to energy carrier mean free paths (MFPs). We expand upon a previous study that emphasizes the importance of nondiffusive thermal transport in resistive-switching random access memory (RRAM). To model this behavior, an approximate solution to the Boltzmann transport equation (BTE), under the relaxation time approximation in the cylindrical geometry, is derived for the case of an arbitrary, temporally periodic surface temperature boundary condition. This boundary condition coupled with the BTE more realistically models switching stimuli in an RRAM device.