新型双向隧道NOR (BiNOR)型三维快闪存储单元

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799352

E. Yang, Cheng-Jye Liu, Tien-Sheng Chao, Ming-Chi Liaw, C. Hsu

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引用次数: 3

摘要

提出了一种具有局部浅p阱的新型3D闪存，BiNOR，用于高速，低功耗和高可靠性应用。低功耗双向隧道编程/擦除是在NOR阵列中实现的，这保证了更好的隧道氧化物可靠性，而以前双向隧道编程/擦除只能在NAND阵列中进行。此外，由于三维电池结构，通过超过15%的传导电流增强实现了高读取性能。

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Novel bi-directional tunneling NOR (BiNOR) type 3-D flash memory cell

A novel 3D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in a NOR array, which guarantees better tunnel oxide reliability, where previously bi-directional tunneling program/erase could only be performed in NAND arrays. Moreover, high read performance is achieved by more than 15% conduction current enhancement due to the 3D cell structure.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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