内置自检测,用于检测半导体存储器中的耦合故障

M. Karpovsky, D. Das, H. Vardhan
{"title":"内置自检测,用于检测半导体存储器中的耦合故障","authors":"M. Karpovsky, D. Das, H. Vardhan","doi":"10.1109/MTDT.1996.782484","DOIUrl":null,"url":null,"abstract":"In this work we investigate the problem of detection and location of single and unlinked multiple pattern sensitive faults in bit oriented RAMs and implementation of a built-in self-test (BIST) unit to test RAM chips in an efficient manner. Our fault model covers cross-talks between any k cells in RAMS. We have reduced the problem of memory testing to the problem of the generation of exhaustive back grounds. Exhaustive tests for detecting coupling faults for k up to 6 (which covers Type I neighborhood) and near exhaustive tests for k up to 9 (which covers Type II neighborhood) are constructed. The systematic nature of the tests constructed enables us to use BIST schemes, for RAMs, with low hardware over heads. We implemented the BIST units for a bit-oriented memory of size IM and calculated the hardware overhead in terms of transistors and area.","PeriodicalId":228146,"journal":{"name":"IEEE International Workshop on Memory Technology, Design and Testing,","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Built in self testing for detection of coupling faults in semiconductor memories\",\"authors\":\"M. Karpovsky, D. Das, H. Vardhan\",\"doi\":\"10.1109/MTDT.1996.782484\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we investigate the problem of detection and location of single and unlinked multiple pattern sensitive faults in bit oriented RAMs and implementation of a built-in self-test (BIST) unit to test RAM chips in an efficient manner. Our fault model covers cross-talks between any k cells in RAMS. We have reduced the problem of memory testing to the problem of the generation of exhaustive back grounds. Exhaustive tests for detecting coupling faults for k up to 6 (which covers Type I neighborhood) and near exhaustive tests for k up to 9 (which covers Type II neighborhood) are constructed. The systematic nature of the tests constructed enables us to use BIST schemes, for RAMs, with low hardware over heads. We implemented the BIST units for a bit-oriented memory of size IM and calculated the hardware overhead in terms of transistors and area.\",\"PeriodicalId\":228146,\"journal\":{\"name\":\"IEEE International Workshop on Memory Technology, Design and Testing,\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Workshop on Memory Technology, Design and Testing,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1996.782484\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Workshop on Memory Technology, Design and Testing,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1996.782484","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

在这项工作中,我们研究了位导向RAM中单个和非链接的多模式敏感故障的检测和定位问题,并实现了内置自检(BIST)单元以有效的方式测试RAM芯片。我们的故障模型涵盖了ram中任何k细胞之间的交叉对话。我们已经将记忆测试的问题简化为穷举背景的生成问题。构建了用于检测k至6(覆盖I型邻域)耦合故障的穷举测试和k至9(覆盖II型邻域)的近穷举测试。构建的测试的系统性质使我们能够在ram中使用低硬件开销的BIST方案。我们为大小为IM的位存储器实现了BIST单元,并计算了晶体管和面积方面的硬件开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Built in self testing for detection of coupling faults in semiconductor memories
In this work we investigate the problem of detection and location of single and unlinked multiple pattern sensitive faults in bit oriented RAMs and implementation of a built-in self-test (BIST) unit to test RAM chips in an efficient manner. Our fault model covers cross-talks between any k cells in RAMS. We have reduced the problem of memory testing to the problem of the generation of exhaustive back grounds. Exhaustive tests for detecting coupling faults for k up to 6 (which covers Type I neighborhood) and near exhaustive tests for k up to 9 (which covers Type II neighborhood) are constructed. The systematic nature of the tests constructed enables us to use BIST schemes, for RAMs, with low hardware over heads. We implemented the BIST units for a bit-oriented memory of size IM and calculated the hardware overhead in terms of transistors and area.
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