SiGe hbt达到微波和毫米波边界

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587884

C. Kermarrec, T. Tewksbury, G. Dawe, R. Baines, B. Meyerson, D. Harame, M. Gilbert

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引用次数: 10

摘要

硅锗异质结双极晶体管(SiGe HBTs)在通信、计算机和运输应用的集成电路生产中，与传统技术相比，具有显著的性能和成本优势。本文综述了SiGe的发展现状，将SiGe与现有的Si和GaAs技术进行了比较，并讨论了SiGe在微波和毫米波领域的应用。

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SiGe HBTs reach the microwave and millimeter-wave frontier

Silicon germanium heterojunction bipolar transistors (SiGe HBTs) offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. This paper reviews the status of SiGe development, compares SiGe with existing Si and GaAs technologies, and discusses applications extending into the microwave and millimeter-wave regime.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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