A. Gruhle, A. Schuppen, U. Konig, U. Erben, H. Schumacher
{"title":"单片26ghz和40ghz压控振荡器与SiGe异质结双极晶体管","authors":"A. Gruhle, A. Schuppen, U. Konig, U. Erben, H. Schumacher","doi":"10.1109/IEDM.1995.499321","DOIUrl":null,"url":null,"abstract":"Monolithically integrated 26 GHz and 40 GHz VCOs have been built with SiGe heterojunction bipolar transistors (HBT). The tuning range was more than 3 GHz, the output power behind an on-chip 10 dB-attenuator reached -13 dBm. The HBTs and the varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The transistors had an f/sub max/ of about 60 GHz and were operated in common-emitter series feedback configuration. Chip sizes including the microstrip resonators were 2/spl times/2.8 mm/sup 2/.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistor\",\"authors\":\"A. Gruhle, A. Schuppen, U. Konig, U. Erben, H. Schumacher\",\"doi\":\"10.1109/IEDM.1995.499321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Monolithically integrated 26 GHz and 40 GHz VCOs have been built with SiGe heterojunction bipolar transistors (HBT). The tuning range was more than 3 GHz, the output power behind an on-chip 10 dB-attenuator reached -13 dBm. The HBTs and the varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The transistors had an f/sub max/ of about 60 GHz and were operated in common-emitter series feedback configuration. Chip sizes including the microstrip resonators were 2/spl times/2.8 mm/sup 2/.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic 26 GHz and 40 GHz VCOs with SiGe heterojunction bipolar transistor
Monolithically integrated 26 GHz and 40 GHz VCOs have been built with SiGe heterojunction bipolar transistors (HBT). The tuning range was more than 3 GHz, the output power behind an on-chip 10 dB-attenuator reached -13 dBm. The HBTs and the varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The transistors had an f/sub max/ of about 60 GHz and were operated in common-emitter series feedback configuration. Chip sizes including the microstrip resonators were 2/spl times/2.8 mm/sup 2/.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
