{"title":"多栅极SOI mosfet中的拐角效应","authors":"W. Xiong, J. W. Park, J. Colinge","doi":"10.1109/SOI.2003.1242919","DOIUrl":null,"url":null,"abstract":"Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.","PeriodicalId":329294,"journal":{"name":"2003 IEEE International Conference on SOI","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"Corner effect in multiple-gate SOI MOSFETs\",\"authors\":\"W. Xiong, J. W. Park, J. Colinge\",\"doi\":\"10.1109/SOI.2003.1242919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.\",\"PeriodicalId\":329294,\"journal\":{\"name\":\"2003 IEEE International Conference on SOI\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 IEEE International Conference on SOI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2003.1242919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE International Conference on SOI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2003.1242919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.