多栅极SOI mosfet中的拐角效应

2003 IEEE International Conference on SOI Pub Date : 2003-11-03 DOI:10.1109/SOI.2003.1242919

W. Xiong, J. W. Park, J. Colinge

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引用次数: 48

摘要

在三栅极SOI mosfet的角落和侧面分别形成沟道。这种现象降低了I/sub on//I/sub off/比率和亚阈值斜率，但只有在使用高掺杂浓度和曲率半径小的拐角时才会出现这种现象。

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Corner effect in multiple-gate SOI MOSFETs

Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the I/sub on//I/sub off/ ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.

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2003 IEEE International Conference on SOI

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