用广义幂律方程模拟超薄La2O3薄膜中的泄漏电流

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251051

E. Miranda, H. Iwai

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引用次数: 0

摘要

研究了超薄氧化镧(La2O3)薄膜电应力MOS结构中的漏电流。样品采用电子束蒸发技术制备，并在超高真空条件下原位退火。我们表明，连续电压坡道的应用会导致一组电流-电压(I-V)特性，可以使用具有串联和并联电阻的幂律模型进行模拟。这种特殊的电压依赖性，结合恒定电压应力下电流-时间(I-t)特征的逐步增加，表明通过氧化物层的泄漏电流可能归因于多次介电击穿传导

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Modeling of the Leakage Current in Ultrathin La2O3 Films Using a Generalized Power Law Equation

The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La2O3) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultra-high vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model with series and parallel resistances. This particular voltage dependence, in combination with the stepwise increase exhibited by the current-time (I-t) characteristic during a constant voltage stress, suggests that the leakage current through the oxide layer might be ascribed to multiple dielectric breakdown conduction

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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