6.5 kV超软快速恢复二极管(U-SFD)，具有高反向恢复能力

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856785

M. Mori, H. Kobayashi, Y. Yasuda

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引用次数: 13

摘要

介绍了一种用于大功率IGBT模块的65 kV超软快速恢复二极管(U-SFD)。U-SFD具有浅p型肖特基结和深pn结。在-40/spl度/C时获得6.8 kV的高阻断电压，在125/spl度/C时获得4.6 V的低正向压降(V/sub F/)，显示出正的热系数。与传统pn二极管相比，肖特基结在V/sub F/和反向恢复损耗、V/sub F/和反向恢复峰值电流、V/sub F/和反向恢复电流变化之间实现了更好的权衡关系，甚至对6.5 kV二极管也是有效的。此外，具有HiRC(高反向恢复能力)结构的U-SFD在4.4 kV的高直流电压和125/spl度/C下表现出良好的开关耐久性。

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6.5 kV ultra soft & fast recovery diode (U-SFD) with high reverse recovery capability

This paper presents a 65 kV ultra soft and fast recovery diode (U-SFD) for a high power IGBT module. The U-SFD has shallow p type Schottky junctions and deep pn junctions. A high blocking voltage of 6.8 kV even at -40/spl deg/C and a low forward voltage drop (V/sub F/) Of 4.6 V at 125/spl deg/C, which show a positive thermal coefficient, are obtained. The Schottky junctions are effective even for 6.5 kV diodes in achieving better trade-off relationships between V/sub F/ and the reverse recovery loss, V/sub F/ and the reverse recovery peak current, and V/sub F/ and the reverse recovery current change compared to a conventional pn diode. Moreover, the U-SFD with a HiRC (high reverse recovery capability) structure demonstrates good switching durability at a high dc-link voltage of 4.4 kV and at 125/spl deg/C.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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