20%掺钪氮化铝横向振动谐振器阻尼因子的实验研究

Zachary Schaffer, L. Colombo, Abhay S. Kochhar, G. Piazza, S. Mishin, Y. Oshmyansky
{"title":"20%掺钪氮化铝横向振动谐振器阻尼因子的实验研究","authors":"Zachary Schaffer, L. Colombo, Abhay S. Kochhar, G. Piazza, S. Mishin, Y. Oshmyansky","doi":"10.1109/MEMSYS.2018.8346673","DOIUrl":null,"url":null,"abstract":"This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (kt2) than undoped AlN films (∼ 2X for 20% doping), but have generally exhibited lower quality factors (Qs) [1,2]. This work is the first to study what damping factors impact the performance of these devices and provide preliminary design guidelines to attain high Qs. Different ScAlN LVR geometries are analyzed and devices tested in air, under vacuum, and at cryogenic temperatures (11 K). Anchor losses and thermoelastic damping (TED) are evaluated and compared to AlN LVRs. Similarities in thermal scaling of Qs in ScAlN resonators indicate that the source of TED is similar to AlN devices.","PeriodicalId":400754,"journal":{"name":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators\",\"authors\":\"Zachary Schaffer, L. Colombo, Abhay S. Kochhar, G. Piazza, S. Mishin, Y. Oshmyansky\",\"doi\":\"10.1109/MEMSYS.2018.8346673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (kt2) than undoped AlN films (∼ 2X for 20% doping), but have generally exhibited lower quality factors (Qs) [1,2]. This work is the first to study what damping factors impact the performance of these devices and provide preliminary design guidelines to attain high Qs. Different ScAlN LVR geometries are analyzed and devices tested in air, under vacuum, and at cryogenic temperatures (11 K). Anchor losses and thermoelastic damping (TED) are evaluated and compared to AlN LVRs. Similarities in thermal scaling of Qs in ScAlN resonators indicate that the source of TED is similar to AlN devices.\",\"PeriodicalId\":400754,\"journal\":{\"name\":\"2018 IEEE Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2018.8346673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2018.8346673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文报道了20%掺钪氮化铝(ScAlN)横向振动谐振器(LVRs)阻尼因子的实验研究。用于lvr的ScAlN薄膜非常有前途,因为它们比未掺杂的AlN薄膜(掺杂20%时为~ 2X)具有更大的机电耦合(kt2),但通常表现出较低的质量因子(Qs)[1,2]。这项工作首次研究了阻尼因素对这些器件性能的影响,并提供了获得高q的初步设计指南。分析了不同的ScAlN LVR几何形状,并在空气、真空和低温(11 K)下对设备进行了测试,评估了锚定损失和热弹性阻尼(TED),并与AlN LVR进行了比较。在ScAlN谐振器中Qs热标度的相似性表明TED的源与AlN器件相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators
This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising since they enable greater electromechanical coupling (kt2) than undoped AlN films (∼ 2X for 20% doping), but have generally exhibited lower quality factors (Qs) [1,2]. This work is the first to study what damping factors impact the performance of these devices and provide preliminary design guidelines to attain high Qs. Different ScAlN LVR geometries are analyzed and devices tested in air, under vacuum, and at cryogenic temperatures (11 K). Anchor losses and thermoelastic damping (TED) are evaluated and compared to AlN LVRs. Similarities in thermal scaling of Qs in ScAlN resonators indicate that the source of TED is similar to AlN devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信