低压瞬态电压抑制器的泄漏抑制

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369966

Sheng-Huei Dai, Hai-ning Wang, M. Chiang, C. Lin, Y. King

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引用次数: 0

摘要

在本研究中，植入毯和LOCOS二极管对减小结边电场都有明显的效果。降低了低偏压下的漏电。LOCOS二极管进一步提高了I-V特性的清晰度。此外，LOCOS二极管的工艺不需要额外的光刻工艺。LOCOS二极管将是一种简单、低成本、有效的提高低压瞬态抑制器性能的方法

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Leakage Suppression of Low Voltage Transient Voltage Suppressor

In this work, both the blanket implanted and LOCOS diodes have obvious effect on reducing the electric field at junction edge. The leakage at low biased voltage is lowered. The LOCOS diode further enhances sharpness of I-V characteristics. Besides, no extra lithography process is needed for the process of the LOCOS diodes. The LOCOS diodes would be a simple, low cost, and effective method for improving the performance of low voltage transient suppressor

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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