由掺杂剂波动引起的阈值变化的蒙特卡罗模型

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-17 DOI:10.1109/VLSIC.1999.797274

D. Frank, Y. Taur, M. Ieong, H.-S.P. Wong

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引用次数: 91

摘要

本文提出了一种新的三维蒙特卡罗方法来模拟mosfet中随机掺杂波动效应。该方法考虑到器件中的每个硅原子，一般适用于任意非均匀掺杂谱。除体掺杂波动外，还首次研究了源漏掺杂波动对短通道阈值电压的影响。结果清楚地表明逆行体掺杂和浅/突变源-漏连接的好处。它还量化了在优化设计的25nm MOSFET中由于离散掺杂波动而引起的阈值电压变化的幅度。

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Monte Carlo modeling of threshold variation due to dopant fluctuations

This paper presents a new 3D Monte Carlo approach for modeling random dopant fluctuation effects in MOSFETs. The method takes every silicon atom in the device into account and is generally applicable to arbitrary nonuniform doping profiles. In addition to body dopant fluctuations, the effect of source-drain dopant fluctuations on short-channel threshold voltage is studied for the first time. The result clearly indicates the benefit of retrograde body doping and shallow/abrupt source-drain junctions. It also quantifies the magnitude of threshold voltage variations due to discrete dopant fluctuations in an optimally designed 25 nm MOSFET.

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1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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