电源对mid-1X TLC NAND闪存可靠性的影响

C. Zambelli, Pietro King, P. Olivo, L. Crippa, R. Micheloni
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引用次数: 8

摘要

NAND闪存是一个复杂的系统,包括许多异构块,必须协同工作以确保信息存储的高可靠性。可靠性社区的许多努力都致力于从单元设备物理的角度研究这种存储介质的可靠性损失,而对构成这种系统的其他块却很少重视。在这项工作中,我们提出了与NAND闪存相关的可靠性威胁,该威胁存在于存储器的高压电路上:对电源的依赖。通过TLC mid-1X样品的实验表征以及高压块的SPICE模拟,我们研究了这种新可靠性问题的可能来源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power-supply impact on the reliability of mid-1X TLC NAND flash memories
NAND Flash memories are complex systems that include many heterogeneous blocks that must work together to ensure a high reliability of the information storage. Many efforts in the reliability community are devoted to investigate the reliability-loss of this storage medium from a cell device physics point of view, whereas little importance is given to the other blocks that constitute such a system. In this work we present a reliability threat related to NAND Flash memories that is present on the high voltage circuitry of the memory: the dependence on the power supply. Through the experimental characterization of TLC mid-1X samples and thanks to the SPICE simulations of the high voltage blocks we have investigated the possible sources of this new reliability issue.
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