采用等离子体后氧化制备HfO2/Al2O3/GeOx/Ge栅极堆，具有0.7 nm超薄EOT的高迁移率Ge pmosfet

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242511

R. Zhang, P. Huang, N. Taoka, M. Takenaka, S. Takagi

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引用次数: 42

摘要

采用等离子体后氧化法制备了HfO2/Al2O3/ gex /Ge栅极堆。这些Ge栅极叠加可以同时实现~0.7 nm的超薄EOT和1011 cm-2eV-1阶的低Dit。(100) Ge pmosfet具有优异的工作性能，在~0.8 nm EOT下的空穴迁移率达到596 cm2/Vs，是迄今为止报道的Ge pmosfet中最高的。

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High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation

HfO₂/Al₂O₃/GeO_x/Ge gate stacks were fabricated by applying the plasma post oxidation to HfO₂/Al₂O₃/Ge structures. These Ge gate stack are shown to simultaneously realize both ultrathin EOT of ~0.7 nm and low D_it of 10¹¹ cm^-2eV^-1 order. The superior operation of (100) Ge pMOSFETs with these gate stacks has been demonstrated with record high hole mobility of 596 cm²/Vs under ~0.8 nm EOT among the Ge pMOSFETs reported so far.

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2012 Symposium on VLSI Technology (VLSIT)

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