Electrical, microstructural, and surface roughness study of thermally oxidized metallic Sm thin film on Si substrate

Electrical, microstructural, and surface roughness of 150 nm sputtered pure samarium metal film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures (600-900 °C) for 15 min have been investigated quantitatively. Effects of oxidation temperatures on the C-V characteristics, surface morphology, and surface roughness of Sm₂O₃ thin films were reported. The smooth and uniform of Sm₂O₃ thin films were revealed by scanning electron microscope and atomic force microscopy analysis. The sample oxidized at 700 °C demonstrated the smallest AV_PB value, lowest STD value (5.56 × 10¹² cm^-2) and D_it values (~10¹⁴ eV^-1 cm^-2).