Hao Wang, Sheng Chang, Cheng Wang, Yue Hu, Hongyu He, Jin He, Qingxing He, Caixia Du, Shengju Zhong
{"title":"椭圆栅极截面对碳纳米管栅极-全能场效应晶体管的影响","authors":"Hao Wang, Sheng Chang, Cheng Wang, Yue Hu, Hongyu He, Jin He, Qingxing He, Caixia Du, Shengju Zhong","doi":"10.1109/ASQED.2013.6643599","DOIUrl":null,"url":null,"abstract":"In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional self-consistence Poisson-Schrodinger equations with the non-equilibrium Green's function method. The on current, potential distribution, local density of states, and transmission coefficients of the devices of different geometry are examined. The performances of elliptical shaped gate device are compared to the round shaped gate ones and it is observed that the geometry has notable effects on the characteristics of the devices.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor\",\"authors\":\"Hao Wang, Sheng Chang, Cheng Wang, Yue Hu, Hongyu He, Jin He, Qingxing He, Caixia Du, Shengju Zhong\",\"doi\":\"10.1109/ASQED.2013.6643599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional self-consistence Poisson-Schrodinger equations with the non-equilibrium Green's function method. The on current, potential distribution, local density of states, and transmission coefficients of the devices of different geometry are examined. The performances of elliptical shaped gate device are compared to the round shaped gate ones and it is observed that the geometry has notable effects on the characteristics of the devices.\",\"PeriodicalId\":198881,\"journal\":{\"name\":\"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASQED.2013.6643599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASQED.2013.6643599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor
In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional self-consistence Poisson-Schrodinger equations with the non-equilibrium Green's function method. The on current, potential distribution, local density of states, and transmission coefficients of the devices of different geometry are examined. The performances of elliptical shaped gate device are compared to the round shaped gate ones and it is observed that the geometry has notable effects on the characteristics of the devices.