300a级2.5D和3D封装集成中TSV对下一代超高速传输和电源完整性设计的影响

2016 IEEE International 3D Systems Integration Conference (3DIC) Pub Date : 2016-11-01 DOI:10.1109/3DIC.2016.7969995

Makoto Suwada, Kazuhiro Kanai

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摘要

本文分析了采用高性能中央处理器(CPU)或其他300a级大规模集成电路和3D大规模集成电路的2.5D模块的下一代超高速传输和功率完整性封装设计中的通硅孔(TSV)效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Considerations of TSV effects on next-generation super-high-speed transmission and power integrity design for 300A-class 2.5D and 3D package integration

An analysis of through silicon via (TSV) effects on next-generation super-high-speed transmission and power integrity package design for 2.5D modules with a highperformance central processing unit (CPU) or other 300A-class LSI mounted and 3D LSI is described in this paper.

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2016 IEEE International 3D Systems Integration Conference (3DIC)

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