F. Mohiyaddin, G. Simion, N. D. Stuyck, R. Li, A. Elsayed, M. Shehata, S. Kubicek, C. Godfrin, B. Chan, J. Jussot, F. C. ubotaru, S. Brebels, F. M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I. Radu
{"title":"加速硅量子点量子比特设计的tcad辅助多物理场建模与仿真","authors":"F. Mohiyaddin, G. Simion, N. D. Stuyck, R. Li, A. Elsayed, M. Shehata, S. Kubicek, C. Godfrin, B. Chan, J. Jussot, F. C. ubotaru, S. Brebels, F. M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I. Radu","doi":"10.23919/SISPAD49475.2020.9241612","DOIUrl":null,"url":null,"abstract":"We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"52 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design\",\"authors\":\"F. Mohiyaddin, G. Simion, N. D. Stuyck, R. Li, A. Elsayed, M. Shehata, S. Kubicek, C. Godfrin, B. Chan, J. Jussot, F. C. ubotaru, S. Brebels, F. M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I. Radu\",\"doi\":\"10.23919/SISPAD49475.2020.9241612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"52 7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.
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