N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura
{"title":"直接键合InP/Si衬底生长1.5μΜ GalnAsP LD的激光特性","authors":"N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura","doi":"10.23919/LTB-3D.2017.7947472","DOIUrl":null,"url":null,"abstract":"Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate\",\"authors\":\"N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura\",\"doi\":\"10.23919/LTB-3D.2017.7947472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate
Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
