28nm移动应用中睡眠模式IDDQ失效分析

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564240

G. Qian, Parker Miao, SoonFatt Ng

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引用次数: 0

摘要

通过对28nm移动应用IC制造过程中遇到的睡眠模式IDDQ故障的研究，本文将展示适用于泄漏源检测的故障分析技术，涉及电源管理功能的激活，而不是纯粹的直流偏置，我们还将讨论在深亚微米技术节点中潜在的工艺/设计弱点和提出解决方案。

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Sleep mode IDDQ failure analysis in 28nm mobile application

Through the investigation of sleep mode IDDQ failure encounter in fabrication of a 28nm mobile application IC, this paper will demonstrate the Failure analysis techniques applicable for leakage source detection involving activation of power management feature rather than pure DC bias, we will also discuss the potential process/design weak point and proposed solution in deep submicron technology node.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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