基于信号完整性和功率完整性联合仿真的单端接口仿真-测量相关性研究

L. Chuan, Wong Tai Loong
{"title":"基于信号完整性和功率完整性联合仿真的单端接口仿真-测量相关性研究","authors":"L. Chuan, Wong Tai Loong","doi":"10.1109/IEMT.2010.5746695","DOIUrl":null,"url":null,"abstract":"Signal Integrity (SI) and Power Integrity (PI) issues are the major concern for high speed design in Electronics Industries these days. Currently, SI and PI analysis is done mostly independently and even though some indirect considerations of each other might be taken during analysis, these SI and PI behaviors doesn't always sum up linearly. This results in very pessimistic designs which does not longer applicable in today's challenging and cost efficient world. Therefore it is crucial to do SI and PI co-simulation in order to achieve lower voltage, higher current and yet cheaper design. In this paper, SI-PI co-simulation has been performed on General Purpose Input Output (GPIO) of interfaces of Intel's latest flip chip chipset. This project's scope also includes lab activities to correlate and validate our simulations results. The most important of all, the findings and lessons learned from this project will also be shared. This information contains valuable and essential data that can be proliferated into future designs to make more robust, competitive and cost effective product.","PeriodicalId":133127,"journal":{"name":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Simulation- measurement correlation study of single ended interfaces by using Signal Integrity and Power Integrity co-simulation\",\"authors\":\"L. Chuan, Wong Tai Loong\",\"doi\":\"10.1109/IEMT.2010.5746695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Signal Integrity (SI) and Power Integrity (PI) issues are the major concern for high speed design in Electronics Industries these days. Currently, SI and PI analysis is done mostly independently and even though some indirect considerations of each other might be taken during analysis, these SI and PI behaviors doesn't always sum up linearly. This results in very pessimistic designs which does not longer applicable in today's challenging and cost efficient world. Therefore it is crucial to do SI and PI co-simulation in order to achieve lower voltage, higher current and yet cheaper design. In this paper, SI-PI co-simulation has been performed on General Purpose Input Output (GPIO) of interfaces of Intel's latest flip chip chipset. This project's scope also includes lab activities to correlate and validate our simulations results. The most important of all, the findings and lessons learned from this project will also be shared. This information contains valuable and essential data that can be proliferated into future designs to make more robust, competitive and cost effective product.\",\"PeriodicalId\":133127,\"journal\":{\"name\":\"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2010.5746695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2010.5746695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

信号完整性(SI)和功率完整性(PI)问题是目前电子工业高速设计的主要关注点。目前,SI和PI分析大多是独立进行的,即使在分析过程中可能会相互间接考虑,但这些SI和PI行为并不总是线性总结。这导致了非常悲观的设计,不再适用于当今充满挑战和成本效益的世界。因此,为了实现低电压、高电流和更便宜的设计,进行SI和PI联合仿真是至关重要的。本文对Intel最新的倒装芯片组的通用输入输出(GPIO)接口进行了SI-PI联合仿真。这个项目的范围还包括实验室活动,以关联和验证我们的模拟结果。最重要的是,从这个项目中获得的发现和经验教训也将被分享。这些信息包含有价值和必要的数据,可以扩展到未来的设计中,以制造更强大,更具竞争力和成本效益的产品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation- measurement correlation study of single ended interfaces by using Signal Integrity and Power Integrity co-simulation
Signal Integrity (SI) and Power Integrity (PI) issues are the major concern for high speed design in Electronics Industries these days. Currently, SI and PI analysis is done mostly independently and even though some indirect considerations of each other might be taken during analysis, these SI and PI behaviors doesn't always sum up linearly. This results in very pessimistic designs which does not longer applicable in today's challenging and cost efficient world. Therefore it is crucial to do SI and PI co-simulation in order to achieve lower voltage, higher current and yet cheaper design. In this paper, SI-PI co-simulation has been performed on General Purpose Input Output (GPIO) of interfaces of Intel's latest flip chip chipset. This project's scope also includes lab activities to correlate and validate our simulations results. The most important of all, the findings and lessons learned from this project will also be shared. This information contains valuable and essential data that can be proliferated into future designs to make more robust, competitive and cost effective product.
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