设计Cu/低k BEOL技术的可扩展性

D. Edelstein
{"title":"设计Cu/低k BEOL技术的可扩展性","authors":"D. Edelstein","doi":"10.1109/IITC.2012.6251651","DOIUrl":null,"url":null,"abstract":"Copper dual damascene BEOL technology has been in production now for 14 years and 7 CMOS generations, since it shipped in its first chips in late 1997, and was first ramped to high volume production in mid-1998. Besides benefits in performance and manufacturability, perhaps the main benefit has been to keep the door open for continued Moore's Law scaling of on-chip wiring, where Al(Cu)-based wires could not have extended - either for fine line current densities and reliability, or multilevel hierarchical scaling for large/thick lines to help circumvent the RC scaling crisis.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineering the extendibility of Cu/low-k BEOL technology\",\"authors\":\"D. Edelstein\",\"doi\":\"10.1109/IITC.2012.6251651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper dual damascene BEOL technology has been in production now for 14 years and 7 CMOS generations, since it shipped in its first chips in late 1997, and was first ramped to high volume production in mid-1998. Besides benefits in performance and manufacturability, perhaps the main benefit has been to keep the door open for continued Moore's Law scaling of on-chip wiring, where Al(Cu)-based wires could not have extended - either for fine line current densities and reliability, or multilevel hierarchical scaling for large/thick lines to help circumvent the RC scaling crisis.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

铜双大马士革BEOL技术自1997年底第一批芯片出货以来,已经生产了14年和7代CMOS,并于1998年中期首次大规模生产。除了在性能和可制造性方面的好处之外,也许主要的好处是为芯片上布线的摩尔定律扩展打开了大门,而基于Al(Cu)的电线无法扩展-无论是细线电流密度和可靠性,还是大/粗线的多级分层扩展,以帮助规避RC缩放危机。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Engineering the extendibility of Cu/low-k BEOL technology
Copper dual damascene BEOL technology has been in production now for 14 years and 7 CMOS generations, since it shipped in its first chips in late 1997, and was first ramped to high volume production in mid-1998. Besides benefits in performance and manufacturability, perhaps the main benefit has been to keep the door open for continued Moore's Law scaling of on-chip wiring, where Al(Cu)-based wires could not have extended - either for fine line current densities and reliability, or multilevel hierarchical scaling for large/thick lines to help circumvent the RC scaling crisis.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信