{"title":"低温等离子体CVD多晶硅制备tft","authors":"M. Mohri, H. Kakinuma, T. Tsuruoka","doi":"10.1109/IEDM.1992.307450","DOIUrl":null,"url":null,"abstract":"Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fabrication of TFTs using plasma CVD poly-Si at very low temperature\",\"authors\":\"M. Mohri, H. Kakinuma, T. Tsuruoka\",\"doi\":\"10.1109/IEDM.1992.307450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307450\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of TFTs using plasma CVD poly-Si at very low temperature
Polycrystalline-Si (poly-Si) films prepared by conventional plasma CVD with SiF/sub 4//SiH/sub 4//H/sub 2/ gases at a very low temperature (300 degrees C) have been applied to thin film transistors (TFTs). The thickness dependance of crystallinity and the surface morphology are characterized. Top gate coplanar TFT have been fabricated with optimized poly-Si. The characteristics are improved by annealing (400 degrees C). It increased the field effect mobility ( mu /sub e/) to 10.1 cm/sup 2//Vs and reduced off current (I/sub off/) by more than one order of magnitude.<>
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