铁电聚合物对石墨烯/ZnO:N电阻器势垒高度的重构

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564293

K. Seo, J. H. Yang, J. Yoo, H. Hwang, K. Chang, C. H. Shim, S. K. Lee, C. Cho, Y. Kim, B. H. Lee

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引用次数: 0

摘要

我们利用静电力显微镜(EFM)极化系统演示并解释了PVDF-TrFE/石墨烯/ZnO:N电阻器的操作。该装置使用铁电聚合物PVDF-TrFE成功地重新配置。实现了~103的器件电流调制。对于动态可重构的逻辑、内存和逻辑-内存混合器件的应用将非常有用。

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Barrier height reconfiguration of graphene/ZnO:N barristor using ferroelectric polymer

We demonstrate and explain the operation of PVDF-TrFE/graphene/ZnO:N barristor using electrostatic force microscopy (EFM) poling system. The device was successfully reconfigured using a ferroelectric polymer, PVDF-TrFE. ~103 of device current modulation were achieved. And, it will be very useful for dynamically reconfigurable logic, memory and logic-memory hybrid device applications.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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