具有低温N+/P结形成和GeSnO2界面层的应变锗锡(GeSn) N沟道mosfet

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242479

G. Han, S. Su, Lanxiang Wang, Wei Wang, X. Gong, Yue Yang, Ivana, P. Guo, Cheng Guo, Guangze Zhang, Jisheng Pan, Zheng Zhang, C. Xue, B. Cheng, Y. Yeo

{"title":"具有低温N+/P结形成和GeSnO2界面层的应变锗锡(GeSn) N沟道mosfet","authors":"G. Han, S. Su, Lanxiang Wang, Wei Wang, X. Gong, Yue Yang, Ivana, P. Guo, Cheng Guo, Guangze Zhang, Jisheng Pan, Zheng Zhang, C. Xue, B. Cheng, Y. Yeo","doi":"10.1109/VLSIT.2012.6242479","DOIUrl":null,"url":null,"abstract":"In this paper, we report the world's first germanium-tin (GeSn) channel nMOSFETs. Highlights of process module advances are: low temperature (400 °C) process for forming high quality n+/p junction with high dopant activation and reduced dopant diffusion; interface engineering achieved with GeSnO2 interfacial layer (IL) between high-k gate dielectric and GeSn channel. A gate-last process was employed. The GeSn nMOSFET with GeSnO2 IL demonstrates a substantially improved SS in comparison with Ge control, and an ION/IOFF ratio of 104.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer\",\"authors\":\"G. Han, S. Su, Lanxiang Wang, Wei Wang, X. Gong, Yue Yang, Ivana, P. Guo, Cheng Guo, Guangze Zhang, Jisheng Pan, Zheng Zhang, C. Xue, B. Cheng, Y. Yeo\",\"doi\":\"10.1109/VLSIT.2012.6242479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report the world's first germanium-tin (GeSn) channel nMOSFETs. Highlights of process module advances are: low temperature (400 °C) process for forming high quality n+/p junction with high dopant activation and reduced dopant diffusion; interface engineering achieved with GeSnO2 interfacial layer (IL) between high-k gate dielectric and GeSn channel. A gate-last process was employed. The GeSn nMOSFET with GeSnO2 IL demonstrates a substantially improved SS in comparison with Ge control, and an ION/IOFF ratio of 104.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

在本文中，我们报道了世界上第一个锗锡(GeSn)沟道nmosfet。工艺模块进展的亮点是:低温(400°C)工艺，形成高质量的n+/p结，具有高掺杂激活和减少掺杂扩散;在高k栅极介质和GeSn通道之间采用GeSnO2界面层(IL)实现界面工程。采用了一种gate-last过程。与Ge对照相比，使用GeSnO2 IL的gsn nMOSFET的SS得到了显著改善，离子/IOFF比为104。

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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer

In this paper, we report the world's first germanium-tin (GeSn) channel nMOSFETs. Highlights of process module advances are: low temperature (400 °C) process for forming high quality n+/p junction with high dopant activation and reduced dopant diffusion; interface engineering achieved with GeSnO2 interfacial layer (IL) between high-k gate dielectric and GeSn channel. A gate-last process was employed. The GeSn nMOSFET with GeSnO2 IL demonstrates a substantially improved SS in comparison with Ge control, and an ION/IOFF ratio of 104.

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2012 Symposium on VLSI Technology (VLSIT)

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