用于三维集成电路热冷却的高可靠厄密密封微流控通道界面分析

Hemanth Kumar Cheemalamarri, Satish Bonam, Dhiman Banik, S. Vanjari, S. Singh
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引用次数: 0

摘要

热管理是目前所有传统2D电子封装的关键问题,在先进3D集成电路技术的情况下,由于功率密度增加和芯片设计复杂,热管理更为关键。传统的方法对3D集成电路的冷却要求已经达到了极限。液冷微通道对于降低高热流密度最有吸引力。然而,将这种微通道集成在堆叠的模具上是具有挑战性的。在这项工作中,我们提出了一种简便的方法来制造和集成用于3D集成电路的高可靠性,紧密密封的芯片间微流控通道。以硅化钛为键合界面,通过同时施加最优的热和力,实现了芯片间微通道在三层堆叠层上的集成。在这里,我们证明了钛(Ti)的反应机理和钛厚度在键合界面上的重要性。采用原子力显微镜(AFM)对钛的表面轮廓进行了温度和载荷优化,并用C-SAM和刀片插入进行了界面检测。利用X-FESEM和能谱仪对界面反应和Ti优化厚度进行了检测。在符合无空隙高可靠键合界面的条件下,在优化条件下,以钛为中间层,在三层堆叠硅结构的模间制备了宽度为$100\ \mu \ mathm {m}$、深度为$40\ \mu \ mathm {m}$的细间距($200\ \mu \ mathm {m}$)微通道。此外,我们还演示了跨堆叠晶圆的微通道集成,以方便的方式为未来的高性能3D IC设计提供支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interface Analysis of High Reliable Hermitic Sealed Microfluidic Channels for Thermal Cooling in 3D ICs
Thermal management is the critical issue in all present conventional 2D electronic packages, and is more crucial in the case staked dies of advanced 3D IC technology, because of increased power density and complex chip designs. The traditional methods are reaching their limits towards cooling requirement of 3D ICs. The liquid cooling micro-channel are the most attractive for high heat flux mitigation. However, the integration of such micro-channels across the stacked dies, is challenging. In this work, we are proposing a facile method of fabrication and integration of a high reliable, tight sealed inter-die microfluidic channels for 3D ICs. The integration of inter-die microchannel over three stacked layers has been developed with titanium silicide as a bonding interface by simultaneous application of optimal heat and force is matching towards CMOS compatibility. Here, we demonstrated the reaction mechanism of titanium (Ti) and importance of Ti thickness across the bonding interface. The temperature and load optimizations carried out using the surface profile of Ti using AFM before bonding, and interface inspection after bonding, by using, C-SAM and razorblade insertion. The interface reactions and thickness of Ti optimization has inspected using X-FESEM and EDS profile. After conforming void free high reliable bonding interface, at optimized conditions, we fabricated fine pitch ($200\ \mu \mathrm{m}$) with $100\ \mu \mathrm{m}$ width and $40\ \mu \mathrm{m}$ depth micro-channels at inter-dies of three-layer stacked silicon structure using titanium as interlayer. Along with, we demonstrated the micro channel integration across the stacked wafers for future high performance 3D IC designs in a facile approach.
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