一种快速有效的检测探针标记和焊丝损伤的方法

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI:10.1109/IPFA.2016.7564272

Jethro Tan, Gary H. G. Chan, W. F. Kho

{"title":"一种快速有效的检测探针标记和焊丝损伤的方法","authors":"Jethro Tan, Gary H. G. Chan, W. F. Kho","doi":"10.1109/IPFA.2016.7564272","DOIUrl":null,"url":null,"abstract":"Under non-optimized wafer probe and wire bonding conditions, pad cratering/interlevel dielectric (ILD) cracks may result in an electrical failure. The conventional procedures to analyse these failures include fault localization, optical inspection, SEM inspection and Focused Ion Beam cross-section, which can be very time consuming. In this paper, we introduce a method to detect these failure more expeditiously using optical microscopy and chemical delayering.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fast and efficient method to detect probe mark and wire bond induced pad damage\",\"authors\":\"Jethro Tan, Gary H. G. Chan, W. F. Kho\",\"doi\":\"10.1109/IPFA.2016.7564272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Under non-optimized wafer probe and wire bonding conditions, pad cratering/interlevel dielectric (ILD) cracks may result in an electrical failure. The conventional procedures to analyse these failures include fault localization, optical inspection, SEM inspection and Focused Ion Beam cross-section, which can be very time consuming. In this paper, we introduce a method to detect these failure more expeditiously using optical microscopy and chemical delayering.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在未优化的晶圆探头和导线粘合条件下，焊盘陨石坑/层间介电(ILD)裂纹可能导致电气故障。分析这些故障的常规方法包括故障定位、光学检查、扫描电镜检查和聚焦离子束截面检查，这些方法非常耗时。在本文中，我们介绍了一种使用光学显微镜和化学脱层更快速地检测这些故障的方法。

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Fast and efficient method to detect probe mark and wire bond induced pad damage

Under non-optimized wafer probe and wire bonding conditions, pad cratering/interlevel dielectric (ILD) cracks may result in an electrical failure. The conventional procedures to analyse these failures include fault localization, optical inspection, SEM inspection and Focused Ion Beam cross-section, which can be very time consuming. In this paper, we introduce a method to detect these failure more expeditiously using optical microscopy and chemical delayering.

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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