针对环形振荡器电源的片上阈值电压变异性检测器用于表征局部器件失配

Poorvi Jain, Bishnu Das
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引用次数: 3

摘要

在这项工作中,提出了一种全数字片上阈值电压变异性检测器,用于检测被测器件阵列(dut)的局部随机阈值电压变化。单环振荡器(RO)的使用使得所提出的设计结构紧凑。被测件中的任何失配都反映为连接到RO电源电压的检测节点电压的变化。从$V_{DD}$到$(V_{DD}-V_{TH})$的电压电平变化引起的RO周期差值实际上代表了被测设备阈值电压的影响。被测件阈值电压的失配可以用RO周期差指数建模。由于估计技术的差异性质,可以减轻局部电源电压变化的影响和由于RO路径的系统变化而产生的误差。所提出的技术的效力是通过在$\pmb{0.13}\mu m$工艺技术节点上设计的预制测试芯片的测量结果来证明的。测试芯片的测试结果表明,该测试结构可以估计局部随机阈值电压变化,对提高成品率和工艺优化也很有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On-Chip Threshold Voltage Variability Detector Targeting Supply of Ring Oscillator for Characterizing Local Device Mismatch
In this work, an all-digital on-chip threshold voltage variability detector is proposed to detect the local random threshold voltage variation from an array of device under test (DUTs). The use of single ring oscillator (RO) results in the compact structure of the proposed design. Any mismatch in the DUT is reflected as the change in the voltage of the sense node which is connected to the supply voltage of the RO. The difference of RO periods due to change in voltage level from $V_{DD}$ to $(V_{DD}-V_{TH})$ at the sense node actually represents the impact of threshold voltage of a DUT. The mismatch in threshold voltage of the DUTs can be modeled exponentially from the RO period difference. The difference nature of estimation technique enables to mitigate the impact of local supply voltage variation and error due to systematic variations in the path of the RO. The potency of the proposed technique is demonstrated using measurement results from a fabricated test chip designed in a $\pmb{0.13}\mu m$ process technology node. Measurement results from a test chip indicate that the test structure can estimate local random threshold voltage variations and is also useful in improving the yield as well as in process optimization.
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