工艺流程对负偏置温度不稳定性的影响

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1200943

A. Scarpa, L. van Marwijk, A. Cacciato, F. Ballarin

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引用次数: 6

摘要

PMOSFET在负偏置高温老化期间的参数退化可能取决于制造工艺流程的许多步骤。用现象学的方法讨论了某些工艺步骤对NBTI的影响。特别地，我们报告了一个等离子体诱导充电降低PMOSFET不稳定性的案例。

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Effect of the process flow on negative-bias-temperature-instability

PMOSFET parametric degradation during negative-bias high temperature aging can depend on many steps of the manufacturing process flow. The effect of some process steps on NBTI is discussed with a phenomenological approach. In particular, we report a case in which plasma induced charging reduces the PMOSFET instability.

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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