冲击力对铜丝键合可靠性的影响

L. Chia, Chua Kok Yau, Tan Chee
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引用次数: 2

摘要

铜线键合技术目前已广泛应用于半导体工业的批量生产。主要的好处是成本优势相对于金线,其次提高产品的性能和可靠性。更多的新产品设计了铜丝键合,新的金属丝键合机也配备了铜丝键合功能。市场趋势显示,对铜线键合产品的接受度逐年增加。因此,铜线成为除金铝线之外最被接受的互连材料。然而,铜丝的硬度是铜丝粘接工艺的关键问题之一。与Au线相比,这导致了更窄的工艺窗口,并导致了更多的可靠性风险。为了克服铜丝键合的难题,开展了许多研究。从材料方面,开发了更柔软的铜丝、更坚固的焊盘等,以提高加工能力。从工艺上看,多步骤粘接是首选方案。多步骤粘接将粘接分为冲击阶段和粘接阶段。冲击阶段是FAB与键合垫的第一次接触,是形成球尺寸、球高度和键合垫凹坑缺陷的关键。粘接阶段决定了粘接的完整性。本文介绍了冲击力对产品可靠性的影响。为了确定粘结垫在粘结过程中所受的冲击力,采用了称重传感器来测量实际的冲击力。不同的冲击力通过改变机器设置,输出的响应是残铝厚度和成坑的结果。Kim等人[1]报道的Cu/ al IMC形成的反应速率是使用Arrhenius图(lnK对1/T)获得的,因此理论IMC厚度可以作为时间和温度的函数来计算。利用理论模型,可以确定Cu/Al界面承受热可靠性应力时的最小Al残余厚度。最终,确定了冲击阶段和粘接阶段的最佳设置,以实现牢固的粘接。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of impact force towards Cu wire bonding reliability
Copper (Cu) wire bonding technology is now widely held in mass production of semiconductor industry. The main benefit is cost advantage against Au wire and secondly enhance product performance and reliability. More new products are design in with Cu wire bonding and new wire bonding machine also equipped with Cu wire bonding capability. The market trend shows acceptance of Cu wire bonding products increasing yearly. Thus, Cu wire become the most accepted interconnect material besides Au & Al wire. However Cu wire property - hardness, is one of the key challenges for wire bonding process. This lead to a more narrow process window compare to Au wire and lead to more reliability risk. To overcome the Cu wire bonding challenge many researches been carried out. From material aspect, softer Cu wire, robust bond pad, etc. are developed to enhance the process ability. From process aspect, multi-steps bonding is the preferred solution. Multi-steps bonding segmented bonding into impact stage and bonding stage. The impact stage is the first contact of the FAB to the bond pad, which is crucial to form the ball size, ball height and bond pad cratering defect. The bonding stage determines the integrity of bonding. This paper presents how the impact force can influence the product reliability. To determine the impact force experience by bond pad during bond a load cell is being used to measure actual impact force. Different impact force by varying the machine setting, the output response is the Al remnant thickness and cratering result. Kim et al. [1] reported reaction rate of Cu/Al IMC formation was obtained using the Arrhenius plot (lnK versus 1/T) and therefore the theoretical IMC thickness can be calculated as a function of time and temperature. Using the theoretical model a minimum Al remnant thickness at zero hour can be target in order for the Cu/Al interface to withstand the thermal reliability stress. Ultimately, optimum setting for impact stage and bonding stage can be identified for a robust bonding.
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