新兴存储技术的前景

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309904

Sung-young Lee, Keunwoo Kim

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引用次数: 5

摘要

具有潜在理想特性的新型记忆是人们越来越感兴趣的话题。其中，铁电RAM、相变RAM和磁性RAM最有可能实现商业化。在本文中，这些记忆将在目前的技术状况，遇到的技术挑战和解决技术壁垒方面进行回顾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Prospects of emerging new memory technologies

New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric RAM, Phase change RAM, and Magnetic RAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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