热辅助准分子激光退火制备低阻超浅n+/p结

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Pub Date : 1900-01-01 DOI:10.1109/IWJT.2002.1225194

K. Kurobe, Y. Ishikawa, K. Kagawa, Y. Niwatsukino, A. Matusno, K. Shibahara

{"title":"热辅助准分子激光退火制备低阻超浅n+/p结","authors":"K. Kurobe, Y. Ishikawa, K. Kagawa, Y. Niwatsukino, A. Matusno, K. Shibahara","doi":"10.1109/IWJT.2002.1225194","DOIUrl":null,"url":null,"abstract":"Low-resistive ultra-shallow n/sup +//p junctions were formed with Sb by a heat-assisted laser annealing method. A wide process window for laser energy density and heating temperature was obtained. Under that condition, Sb diffusion was small and did not affect junction depth. The obtained sheet resistance was about 540/spl Omega///spl square/ for junction depth of 21 nm.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealing\",\"authors\":\"K. Kurobe, Y. Ishikawa, K. Kagawa, Y. Niwatsukino, A. Matusno, K. Shibahara\",\"doi\":\"10.1109/IWJT.2002.1225194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low-resistive ultra-shallow n/sup +//p junctions were formed with Sb by a heat-assisted laser annealing method. A wide process window for laser energy density and heating temperature was obtained. Under that condition, Sb diffusion was small and did not affect junction depth. The obtained sheet resistance was about 540/spl Omega///spl square/ for junction depth of 21 nm.\",\"PeriodicalId\":300554,\"journal\":{\"name\":\"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2002.1225194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2002.1225194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

用热辅助激光退火方法制备了低阻超浅n/sup +//p结。获得了较宽的激光能量密度和加热温度处理窗口。在此条件下，Sb扩散较小，不影响结深。结深为21 nm时，得到的薄片电阻约为540/spl ω ///spl square/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Formation of low-resistive ultra-shallow n+/p junction by heat-assisted excimer laser annealing

Low-resistive ultra-shallow n/sup +//p junctions were formed with Sb by a heat-assisted laser annealing method. A wide process window for laser energy density and heating temperature was obtained. Under that condition, Sb diffusion was small and did not affect junction depth. The obtained sheet resistance was about 540/spl Omega///spl square/ for junction depth of 21 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

自引率

0.00%

发文量