GMR传感器在HBM和CDM瞬态下的热响应比较

2004 Electrical Overstress/Electrostatic Discharge Symposium Pub Date : 2004-09-01 DOI:10.1109/EOSESD.2004.5272586

Yizhang Yang, M. Asheghi

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引用次数: 0

摘要

利用有限元模型研究了GMR传感器在ESD脉冲作用下的热响应。仿真比较了GMR传感器在人体模型(HBM)和电荷器件模型(CDM)波形作用下的瞬态温升。结果表明，GMR磁头的ESD阈值损伤与热时间常数和ESD瞬态电流有关。

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Comparison of thermal response of GMR sensor subjected to HBM and CDM transients

The thermal response of the GMR sensor during the ESD pulse is investigated using finite element model. The simulation compares the transient temperature rise in GMR sensor when they are subjected to the Human Body Model (HBM) and Charged-Device Model (CDM) waveforms. The results indicate that the ESD threshold damage for GMR head depends on both the thermal time constant and the ESD transient current.

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2004 Electrical Overstress/Electrostatic Discharge Symposium

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