高压igbt短路关断时的动态自箝位

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694440

T. Basler, Riteshkumar Bhojani, J. Lutz, R. Jakob

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引用次数: 23

摘要

测量表明，IGBT能够在短路关断时将集电极-发射极电压箝位到一定值，尽管应用了非常低的栅极关断电阻和高寄生电感。IGBT本身通过雪崩注入降低了关断diC/dt。然而，在快速关断期间观察到的器件破坏与过压失效模式无关。高压igbt的测量和半导体模拟详细解释了自箝位机制。描述了可能与成丝过程有关的故障。讨论了在短路关断期间提高IGBT鲁棒性的方法。

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Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs

Measurements show that the IGBT is able to clamp the collector-emitter voltage to a certain value at short-circuit turn-off despite a very low gate turn-off resistor in combination with a high parasitic inductance is applied. The IGBT itself reduces the turn-off diC/dt by avalanche injection. However, device destructions during fast turn-off were observed which cannot be linked with an overvoltage failure mode. Measurements and semiconductor simulations of high-voltage IGBTs explain the self-clamping mechanism in detail. Possible failures which can be connected with filamentation processes are described. Options for improving the IGBT robustness during short-circuit turn-off are discussed.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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