J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter
{"title":"坚固，宽范围氢气传感器","authors":"J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter","doi":"10.1109/IEDM.1992.307415","DOIUrl":null,"url":null,"abstract":"A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Robust, wide range hydrogen sensor\",\"authors\":\"J. Rodriguez, R. C. Hughes, W. Corbett, P. McWhorter\",\"doi\":\"10.1109/IEDM.1992.307415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new robust, wide-range hydrogen sensor technology integrates catalytic gate transistors and resistors with a baseline CMOS process. Pd or PdNi gate transistors detect low concentrations of hydrogen (ppm) and Pd or PdNi thin film resistors sense higher concentrations of hydrogen (up to 100%). Fabrication of both sensors on the same die allows detection of hydrogen over a dynamic range of 6 orders of magnitude. On-chip power transistor heaters and diode thermometers allow accurate chip temperature control.<>
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