PtSi/多孔肖特基探测器的理论建模

ICM 2001 Proceedings. The 13th International Conference on Microelectronics. Pub Date : 1900-01-01 DOI:10.1109/ICM.2001.997483

F. Raissi, M. Mohtashami Far

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摘要

建立了PtSi/多孔Si肖特基探测器的电流-电压特性模型。假设在多孔表面的尖锐和不规则边缘处形成高电场，导致雪崩和隧道击穿。该模型很好地解释了I-V曲线的形状、随温度的变化、对近红外和远红外的响应以及大量子效率。

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Theoretical modeling of PtSi/porous Schottky detectors

The current-voltage characteristic of PtSi/porous Si Schottky detectors has been modeled. It is assumed that high electric fields are developed at sharp and irregular edges of the porous surface, causing avalanche and tunneling breakdown. The shape of the I-V curve, its change with temperature, its response to near and far IR, and the large quantum efficiency are satisfactorily explained by this model.

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ICM 2001 Proceedings. The 13th International Conference on Microelectronics.

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