纳米片mosfet的交流负极效应模拟

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241656

Sung-Min Hong, Phil-Hun Ahn

{"title":"纳米片mosfet的交流负极效应模拟","authors":"Sung-Min Hong, Phil-Hun Ahn","doi":"10.23919/SISPAD49475.2020.9241656","DOIUrl":null,"url":null,"abstract":"In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"AC NEGF Simulation of Nanosheet MOSFETs\",\"authors\":\"Sung-Min Hong, Phil-Hun Ahn\",\"doi\":\"10.23919/SISPAD49475.2020.9241656\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.\",\"PeriodicalId\":206964,\"journal\":{\"name\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SISPAD49475.2020.9241656\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了纳米片mosfet的交流非平衡格林函数(NEGF)仿真。为了有效实现，采用解耦模式空间方法对交流NEGF方程进行离散化。对泊松方程进行自洽求解，得到静电势。我们的内部器件模拟器G-Device用于模拟纳米片mosfet的交流响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

AC NEGF Simulation of Nanosheet MOSFETs

In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

自引率

0.00%

发文量