60v级功率IC技术，用于集成沟槽MOSFET的智能电源开关

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694450

Y. Toyoda, Hideaki Katakura, Takatoshi Ooe, M. Iwaya, H. Sumida

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引用次数: 3

摘要

新型60v级智能功率开关(IPS)技术实现了垂直沟槽MOSFET，用于汽车应用。我们已经实现了将具有高电压浪涌稳健性的60v级垂直沟槽MOSFET与5V和60v级横向平面MOSFET集成在一个芯片上的方法。为了降低比导通电阻(Ron·A)，采用0.35μm规则设计了整合式垂直沟槽MOSFET。因此，我们的集成垂直沟槽MOSFET的Ron·a低于0.6mΩ·cm2，约为传统IPS中集成垂直平面MOSFET Ron·a的40%。本文介绍了我们新开发的用于IPS的60v级功率集成电路技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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60V-class power IC technology for an intelligent power switch with an integrated trench MOSFET

New 60V-class intelligent power switch (IPS) technology implementing a vertical trench MOSFET has been developed for automotive applications. We have realized the method to integrate a 60V-class vertical trench MOSFET with high voltage surge robustness and 5V- and 60V-class lateral planar MOSFETs on one chip. The integrated vertical trench MOSFET is designed by 0.35μm-rule in order to reduce its specific on-resistance (Ron·A). As a result, our integrated vertical trench MOSFET has the Ron·A below 0.6mΩ·cm2 which is about 40% Ron·A of the vertical planar MOSFET integrated in the conventional IPS. This paper reports our newly developed 60V-class power IC technology for the IPS.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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