Measurement and analysis of thermal stresses in 3-D integrated structures containing through-silicon-vias

In this work, experimental measurements and numerical analysis of the thermal stresses in TSV structures are presented. The stresses are measured using the micro-Raman spectroscopy and the precision bending beam technique. Together, the two methods provide a complementary approach for characterizing thermomechanical behaviors of the TSV structures. The effect of plasticity on the stresses is discussed, and the measured stress behavior is used to analyze the keep-out zone (KOZ) for active devices near the TSVs.