短路额定沟槽IGBT的条纹和细胞几何比较

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856824

C. Yun, Hyun Chul Kim, Kyu-Hyun Lee, Joo Il Kim, Tae Hoon Kim

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引用次数: 0

摘要

实现了具有各种单元结构(包括单元和条纹几何)的600 V沟槽igbt，并在短路坚固性和器件性能方面比较了它们的器件特性。采用n+源EBR和通道生成EBR的蜂窝IGBT的SCWT值为18 /spl mu/s, Vce值为1.7 V，条带IGBT的SCWT值为16 /spl mu/s, Vce值为1.8 V。实验结果表明，细胞几何沟槽IGBT具有较好的抗短路性能。

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Comparison of stripe and cellular geometry for short circuit rated trench IGBT

600 V trench IGBTs with various cell structures including cellular and stripe geometry are implemented and their device characteristics are compared in terms of short-circuit ruggedness and device performances. The cellular IGBT which employs n+ source EBR and channel generated EBR shows 18 /spl mu/s of SCWT and 1.7 V of Vce,sat while the stripe IGBT shows 16 /spl mu/s and 1.8 V, respectively. Experimental results show that cellular geometry trench IGBT exhibits better short-circuit immunity than the stripe geometry.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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