一种新的超低比接触电阻率提取方法

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251584

Hsuan-Tzu Tseng, B. Tsui

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引用次数: 2

摘要

在这项工作中，提出了一种提取低至10-9 Ω-cm2的超低比接触电阻率的新方法。通过三维仿真分析了试验结构的设计准则。与典型的跨桥-开尔文电阻器结构相比，该结构在低电阻率下精度更高，设计规则更宽松，制作工艺更简单。

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A new procedure to extract ultra-low specific contact resistivity

In this work, a new procedure to extract ultra-low specific contact resistivity down to 10-9 Ω-cm2 is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.

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2012 IEEE International Interconnect Technology Conference

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