高压工艺在铜/低钾工艺中的应用

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854295

K. Suzuki, T. Fujikawa, N. Kawakami

{"title":"高压工艺在铜/低钾工艺中的应用","authors":"K. Suzuki, T. Fujikawa, N. Kawakami","doi":"10.1109/IITC.2000.854295","DOIUrl":null,"url":null,"abstract":"High-pressure processing in the range of 16-120 MPa has been introduced to Cu/low-k interconnect technologies as a new generation. Hot isostatic pressing (HIP) was applied to the formation of Cu plugs with a high aspect ratio. A new finding related to a combination with electroplated Cu is also discussed. A supercritical CO/sub 2/ fluid was applied to a formation of low-k porous silica films as a means of capillary-force-free drying. A low dielectric constant, as low as 1.1, was achieved by using this technique. It is demonstrated that high-pressure processing has several attractive advantages for semiconductor processing.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"235 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Application of high pressure process into Cu/low-k technologies\",\"authors\":\"K. Suzuki, T. Fujikawa, N. Kawakami\",\"doi\":\"10.1109/IITC.2000.854295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-pressure processing in the range of 16-120 MPa has been introduced to Cu/low-k interconnect technologies as a new generation. Hot isostatic pressing (HIP) was applied to the formation of Cu plugs with a high aspect ratio. A new finding related to a combination with electroplated Cu is also discussed. A supercritical CO/sub 2/ fluid was applied to a formation of low-k porous silica films as a means of capillary-force-free drying. A low dielectric constant, as low as 1.1, was achieved by using this technique. It is demonstrated that high-pressure processing has several attractive advantages for semiconductor processing.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"235 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

作为新一代Cu/low-k互连技术，16- 120mpa范围内的高压处理已被引入。采用热等静压(HIP)技术制备了高径比铜塞。还讨论了与电镀铜结合的新发现。超临界CO/sub 2/流体用于低钾多孔二氧化硅膜的形成，作为无毛细管力干燥的手段。使用该技术可获得低介电常数，低至1.1。结果表明，高压工艺在半导体加工中具有许多引人注目的优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Application of high pressure process into Cu/low-k technologies

High-pressure processing in the range of 16-120 MPa has been introduced to Cu/low-k interconnect technologies as a new generation. Hot isostatic pressing (HIP) was applied to the formation of Cu plugs with a high aspect ratio. A new finding related to a combination with electroplated Cu is also discussed. A supercritical CO/sub 2/ fluid was applied to a formation of low-k porous silica films as a means of capillary-force-free drying. A low dielectric constant, as low as 1.1, was achieved by using this technique. It is demonstrated that high-pressure processing has several attractive advantages for semiconductor processing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

自引率

0.00%

发文量