基于片上s参数技术的MOS器件非准静态效应研究

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292899

R. Singh, A. Juge, R. Joly, G. Mortin

{"title":"基于片上s参数技术的MOS器件非准静态效应研究","authors":"R. Singh, A. Juge, R. Joly, G. Mortin","doi":"10.1109/ICMTS.1993.292899","DOIUrl":null,"url":null,"abstract":"The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25- mu m) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques\",\"authors\":\"R. Singh, A. Juge, R. Joly, G. Mortin\",\"doi\":\"10.1109/ICMTS.1993.292899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25- mu m) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

以Bagheri和Tsividis i阶NQS模型为参考，研究了MOS器件的高频特性，以期识别非准静态(NQS)效应。分析了一组详尽的数据。这表明在长通道和短通道器件中都存在NQS效应。在基于电荷的准静态模型和长通道(25 μ m)器件的测量结果之间观察到显著的差异。提出了一种去嵌入技术来观察器件在更高频率范围内的特性。

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An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques

The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25- mu m) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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