超越纳米级DRAM和闪存对新兴存储设备研究的挑战和机遇

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI:10.1109/WMED.2004.1297344

L. Tran

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引用次数: 1

摘要

随着动态随机存取存储器(DRAM)和闪存非易失性存储器(NVM)技术进入其持续增长和进步的40年，在处理和设备小型化方面，扩展这些各自设备的困难已经显现出来。本文解决了这些挑战，并提出了新兴的设备替代品，以及他们对该领域研究和发展的挑战和机遇。

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Beyond nanoscale DRAM and flash challenges and opportunities for research in emerging memory devices

As dynamic random access memory (DRAM) and flash nonvolatile memory (NVM) technologies are entering their 4/sup th/ decade of continuing growth and progress, difficulties in scaling these respective devices have surfaced both in processing and device miniaturization. This paper addresses these challenges and presents emerging device alternatives with their perspective challenges and opportunities for research and development in this field.

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来源期刊

2004 IEEE Workshop on Microelectronics and Electron Devices

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