{"title":"利用光电发射测量LOCOS-和沟槽隔离n- mosfet的通道宽度","authors":"T. Ohzone, H. Iwata","doi":"10.1109/ICMTS.1993.292908","DOIUrl":null,"url":null,"abstract":"A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"131 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission\",\"authors\":\"T. Ohzone, H. Iwata\",\"doi\":\"10.1109/ICMTS.1993.292908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"131 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292908\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission
A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width.<>