利用光电发射测量LOCOS-和沟槽隔离n- mosfet的通道宽度

T. Ohzone, H. Iwata
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引用次数: 3

摘要

提出了一种简单、准确、无损的利用高分辨率光电发射显微镜测量n-MOSFET通道宽度的方法。对于局部应用硅(LOCOS)和沟槽隔离的测试器件,证实了该方法可以适用于亚微米通道宽度的n- mosfet。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission
A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width.<>
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