{"title":"集成磁通集中器改进了CMOS磁晶体管","authors":"M. Schneider, R. Castagnetti, M. Allen, H. Baltes","doi":"10.1109/MEMSYS.1995.472606","DOIUrl":null,"url":null,"abstract":"A magnetic microsystem based on CMOS technology merged with electroplating as a post-processing step is reported. The system makes use of a lateral dualcollector magnetotransistor with suppressed-sidewallinjection (SSIMT) and a highly permeable and soft magnetic microstructure of permalloy. This structure increases the magnetic flux density in the sensitive SSIMT region. It is deposited on top of the sensor chip using a CMOS compatible electroplating technique [ 11. The system sensitivity is increased by at least one order of magnitude over the conventional SSIMT.","PeriodicalId":273283,"journal":{"name":"Proceedings IEEE Micro Electro Mechanical Systems. 1995","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Integrated flux concentrator improves CMOS magnetotransistors\",\"authors\":\"M. Schneider, R. Castagnetti, M. Allen, H. Baltes\",\"doi\":\"10.1109/MEMSYS.1995.472606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A magnetic microsystem based on CMOS technology merged with electroplating as a post-processing step is reported. The system makes use of a lateral dualcollector magnetotransistor with suppressed-sidewallinjection (SSIMT) and a highly permeable and soft magnetic microstructure of permalloy. This structure increases the magnetic flux density in the sensitive SSIMT region. It is deposited on top of the sensor chip using a CMOS compatible electroplating technique [ 11. The system sensitivity is increased by at least one order of magnitude over the conventional SSIMT.\",\"PeriodicalId\":273283,\"journal\":{\"name\":\"Proceedings IEEE Micro Electro Mechanical Systems. 1995\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-01-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Micro Electro Mechanical Systems. 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1995.472606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Micro Electro Mechanical Systems. 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1995.472606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A magnetic microsystem based on CMOS technology merged with electroplating as a post-processing step is reported. The system makes use of a lateral dualcollector magnetotransistor with suppressed-sidewallinjection (SSIMT) and a highly permeable and soft magnetic microstructure of permalloy. This structure increases the magnetic flux density in the sensitive SSIMT region. It is deposited on top of the sensor chip using a CMOS compatible electroplating technique [ 11. The system sensitivity is increased by at least one order of magnitude over the conventional SSIMT.
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