改进的20 V侧沟栅功率mosfet，导通电阻极低，为7.8 m/spl ω //spl middot/mm/sup 2/

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856770

A. Nakagawa, Y. Kawaguchi

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引用次数: 9

摘要

我们提出了一种改进的侧沟槽栅极MOSFET，具有新的沟槽漏极触点。该器件预计可实现25 V击穿电压和7.8 m/spl ω //spl middot/mm/sup 2/的极低导通电阻，比先前提出的标准侧沟栅mosfet低20%。所提出的沟槽接触使电子电流均匀分布在漂移层中，有效地降低了器件的导通电阻。在本文中，我们还展示了制造的标准沟槽栅LDMOS的详细电气特性。该器件实现了1.1/spl倍/10/sup 4/ A/cm/sup 2/的大电流关断能力。

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Improved 20 V lateral trench gate power MOSFETs with very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/

We propose an improved lateral trench gate MOSFET with a new trench drain contact. The device is predicted to achieve 25 V breakdown voltage and a very low on-resistance of 7.8 m/spl Omega//spl middot/mm/sup 2/, which is by 20% lower than that of previously proposed standard lateral trench gate MOSFETs. The proposed trench contact uniformly distributes the electron current in the drift layer, and effectively reduces the device on-resistance. In the present paper, we also show the detailed electrical characteristics of the fabricated standard trench gate LDMOS. The large current turn-off capability of 1.1/spl times/10/sup 4/ A/cm/sup 2/ was achieved by the fabricated device.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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