GaN TLM结构中的体积和接触1/f噪声

31st European Solid-State Device Research Conference Pub Date : 2001-09-11 DOI:10.1109/ESSDERC.2001.195274

R. Feyaerts, L. Vandamme, G. Trefán, M.C.J.C.M. Kramer, C. Zellweger

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引用次数: 4

摘要

我们测量了不同气相外延(VPE)技术生长的n型GaN样品的接触电阻和1/f噪声。触点采用线性传输线几何(TLM)。在一些样品中，金属半导体接触噪声占主导地位。这种1/f噪声跨越了40多年。在其他样本中，总体噪声占主导地位。这个1/f噪声由经验关系描述

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Bulk and contact 1/f noise in GaN TLM structures

We measure the contact resistance and 1/f noise on n-type GaN samples grown by various vapour phase epitaxy (VPE) technologies. Contacts are made in a linear transmission line geometry (TLM). In some samples the metal semiconductor contact noise dominates. This 1/f noise spans over 4 decades. In other samples the bulk noise dominates. This 1/f noise is described by the empirical relation

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31st European Solid-State Device Research Conference

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